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| (R) TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TIP147 respectively. TO-218 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case 25 o C Storage Temperature Max. Operating Junction Temperature TIP140 TIP145 60 60 Value TIP141 TIP146 80 80 5 10 20 0.5 125 -65 to 150 150 TIP142 TIP147 100 100 V V V A A A W o o Unit C C For PNP types voltage and current values are negative. March 2000 1/4 TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions for TIP140/145 for TIP141/146 for TIP142/147 for TIP140/145 for TIP141/146 for TIP142/147 V EB = 5 V I C = 30 mA for TIP140/145 for TIP141/146 for TIP142/147 IC = 5 A I C = 10 A I C = 10 A IC = 5 A I C = 10 A I C = 10 A I B2 = -40 mA I B = 10 mA I B = 40 mA V CE = 4 V V CE = 4 V V CE = 4 V I B1 = 40 mA RL = 3 1000 500 0.9 4 s s V CB = 60 V V CB = 80 V V CB = 100 V V CE = 30 V V CE = 40 V V CE = 50 V Min. Typ. Max. 1 1 1 2 2 2 2 Unit mA mA mA mA mA mA mA I CEO I EBO VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * V BE(on) * h FE * Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain RESISTIVE LOAD Turn-on Time Turn-off Time 60 80 100 2 3 3 V V V V V V t on t off For PNP types voltage and current values are negative. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 123 P025A G 3/4 TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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